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 Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC3314
4.00.2
Unit: mm
s Features
q q q
0.70.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings -30 -20 -5 -60 -30 300 150 -55 ~ +150
Unit V V V mA mA mW C C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.540.15
EIAJ:SC-72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitanse
(Ta=25C)
Symbol ICBO ICEO IEBO hFE
*
Conditions VCB = -10V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCE = -10V, IC = -1mA IC = -10mA, IB = -1mA VCE = -10V, IC = -1mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 1mA, f = 5MHz VCB = -10V, IE = 1mA, f = 2MHz VCE = -10V, IC = -1mA, f = 10.7MHz
min
typ
max - 0.1 -100 -10
2.00.2
marking
+0.2 0.45-0.1
s Absolute Maximum Ratings
(Ta=25C)
15.60.5
Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting.
3.00.2
Unit A A A
70 - 0.1 - 0.7 150 300 2.8 22 1.2
220 V V MHz 4.0 50 2.0 dB pF
VCE(sat) VBE fT NF Zrb Cre
*h
FE
Rank classification
B 70 ~ 140 C 110 ~ 220 hFE
Rank
1
Transistor
PC -- Ta
500 -24 Ta=25C 450 -20 IB=-250A -50
2SA1323
IC -- VCE
-60 VCE=-10V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160
-200A -16 -150A -12 -100A
Collector current IC (mA)
-40 25C Ta=75C -30 -25C
-8
-20
-4
-50A
-10
0 0 -2 -4 -6 -8 -10 -12
0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 Ta=75C -1 25C -25C IC/IB=10 -120
hFE -- IC
400 VCE=-10V 350 300 250 200 150 100 50 0 - 0.1 - 0.3 0 0.1
fT -- IE
Ta=25C VCB=-10V
Forward current transfer ratio hFE
-100
Ta=75C
-80
25C -25C
-60
- 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3
-40
-20
-1
-3
-10
-30
-100
-1
-3
-10
-30
-100
Transition frequency fT (MHz)
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
Common emitter reverse transfer capacitance Cre (pF)
5 6
Cre -- VCE
f=1MHz IE=0 Ta=25C IC=-1mA f=10.7MHz Ta=25C 24
PG -- IC
VCE=-10V f=100MHz Ta=25C
Collector output capacitance Cob (pF)
4
5
20
4
Power gain PG (dB)
-3 -10 -30 -100
16
3
3
12
2
2
8
1
1
4
0 -1
-3
-10
-30
-100
0 -1
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
2
Transistor
NF -- IE
6 VCB=-10V f=100MHz Ta=25C
2SA1323
5
Noise figure NF (dB)
4
3
2
1
0 - 0.1
- 0.3
-1
-3
-10
Emitter current IE (mA)
3


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